document number: 89266 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 10-nov-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 high-voltage trench mos barrier schottky rectifier ultra low v f = 0.47 v at i f = 5 a vf30120sg vishay general semiconductor new product features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? solder bath temperature 275 c max. 10 s, per jesd 22-b106 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to ie c 61249-2-21 definition typical applications for use in high frequency dc/dc converters, switching power supplies, freewheeling diodes, or-ing diode, and reverse battery protection. mechanical data case: ito-220ab molding compound meets ul 94 v-0 flammabi lity rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 30 a v rrm 120 v i fsm 220 a v f at i f = 30 a 0.81 v t j max. 150 c tmbs ? ito-220ab 1 2 3 vf30120sg pin 1 pin 2 pin 3 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol vf30120sg unit maximum repetitive pe ak reverse voltage v rrm 120 v maximum average forward rectified current (fig. 1) i f(av) 30 a peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 220 a voltage rate of change (rated v r ) dv/dt 10 000 v/s isolation voltage from term al to heatsink t = 1 min v ac 1500 v operating junction and storage temperature range t j , t stg - 40 to + 150 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89266 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 10-nov-10 vf30120sg vishay general semiconductor new product notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power dissipation characteristics electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage i f = 5 a t a = 25 c v f (1) 0.54 - v i f = 15 a 0.80 - i f = 30 a 1.16 1.28 i f = 5 a t a = 125 c 0.47 - i f = 15 a 0.66 - i f = 30 a 0.81 0.90 reverse current v r = 90 v t a = 25 c i r (2) 13 - a t a = 125 c 13 - ma v r = 120 v t a = 25 c - 500 a t a = 125 c 23 55 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol vf30120sg unit typical thermal resistance r jc 4.0 c/w ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode ito-220ab vf30120sg-m3/4w 1.75 4w 50/tube tube case temperature (c) average forward current (a) 25 30 35 20 15 10 5 0 0 25 50 75 100 125 150 resistive or inductive load mounted on specific heatsink 0 15 20 25 30 35 40 45 50 0 4 8 12 16 20 24 28 32 36 average forward current (a) average power loss (w) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 5 10 d = 1.0 d = t p /t t p t
document number: 89266 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 10-nov-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 vf30120sg vishay general semiconductor new product fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics fig. 5 - typical transient thermal impedance fig. 6 - typical j unction capacitance package outline dimensions in inches (millimeters) 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.4 instantaneous forward voltage (v) instantaneous forward current (a) t a = 150 c t a = 125 c 1.2 t a = 25 c t a = 100 c 10 20 30 40 50 60 70 80 90 100 percent of rated peak reverse voltage (%) instantaneous reverse current (ma) t a = 150 c t a = 125 c t a = 25 c t a = 100 c 0.001 0.01 0.1 1 10 100 0.1 1 10 0.01 0.1 1 10 100 t - pulse duration (s) junction to case transient thermal impedance (c/w) 10 1000 10 000 0.1 1 10 100 reverse voltage (v) junction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 mvp-p 100 ito-220ab 0.076 (1.93) ref. 45 ref. pi n 3 2 1 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) ref. 0.600 (15.24) 0.580 (14.73) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.191 (4.85) 0.171 (4.35) 0.671 (17.04) 0.651 (16.54) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.028 (0.71) 0.020 (0.51) 0.110 (2.79) 0.100 (2.54) 7 ref. 0.135 (3.43) dia. 0.122 (3.08) dia. 0.110 (2.79) 0.100 (2.54) 0.190 (4.83) 0.170 (4.32) 7 ref. 7 ref. 0.140 (3.56) dia. 0.125 (3.17) dia. 0.350 (8.89) 0.330 (8.38)
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